NSA5.0AT3G
MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1) @ T L = 25 ° C, Pulse Width = 1 ms
DC Power Dissipation @ T L = 75 ° C
Measured Zero Lead Length (Note 2)
Derate Above 75 ° C
Thermal Resistance from Junction to Lead
DC Power Dissipation (Note 3) @ T A = 25 ° C
Derate Above 25 ° C
Thermal Resistance from Junction to Ambient
Forward Surge Current (Note 4) @ T A = 25 ° C
Operating and Storage Temperature Range
Symbol
P PK
P D
R q JL
P D
R q JA
I FSM
T J , T stg
Value
400
1.5
20
50
0.5
4.0
250
40
? 65 to +150
Unit
W
W
mW/ ° C
° C/W
W
mW/ ° C
° C/W
A
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000 m s, non ? repetitive.
2. 1 ″ square copper pad, FR ? 4 board.
3. FR ? 4 board, using ON Semiconductor minimum recommended footprint, as shown in 403D case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS
(T A = 25 ° C unless otherwise noted)
Symbol Parameter
I PP
Maximum Reverse Peak Pulse Current
V C
Clamping Voltage @ I PP
I F
I
I R V F
V RWM
I R
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V RWM
V C V BR V RWM
I T
V
V BR
I T
Breakdown Voltage @ I T
Test Current
I F
V F
Forward Current
Forward Voltage @ I F
I PP
Uni ? Directional TVS
ELECTRICA L CHARACTERISTICS
Device
Device
Marking
V RWM
(Note 5)
Volts
I R @
V RWM
m A
Breakdown Voltage
V BR (Volts) (Note 6)
Min Nom Max
@ I T
mA
V C @ I PP
(Note 7)
V C I PP
Volts Amps
C Typ.
(Note 8)
pF
V F @ I F
(Note 9)
Max
V
NSA5.0AT3G
QA
5.0
400
6.4
6.7
7.0
10
9.2
43.5
2450
3.5
5. A transient suppressor is normally selected according to the working peak reverse voltage (V RWM ), which should be equal to or greater than
the DC or continuous peak operating voltage level.
6. V BR measured at pulse test current I T at an ambient temperature of 25 ° C.
7. Surge current waveform per Figure 2 and derate per Figure 3.
8. Bias voltage = 0 V, F = 1.0 MHz, T J = 25 ° C.
9. 1/2 sine wave or equivalent, PW = 8.3 ms, non ? repetitive, I F = 30 A.
http://onsemi.com
2
相关PDF资料
NSB12ANT3G TVS ZENER 600W 12V SMB
NSB13ANT3G TVS ZENER 600W 13V SMB
NSQA12VAW5T2G TVS QUAD ARRAY LO CAP ESD SOT323
NUP1105LT3G IC BUS PROTECTOR CAN/LIN SOT-23
NUP1301ML3T1G IC DIODE ARRAY LOCAP ESD SOT-23
NUP1301U,115 IC DIODE ARRAY ESD SC-70
NUP2114UCMR6T1G TVS ARRAY ESD 6-TSOP
NUP2201MR6T1 IC TVS DIODE ARRAY HS LINE 6TSOP
相关代理商/技术参数
NSA5050-3 制造商: 功能描述: 制造商:undefined 功能描述:
NSA5050-3C 制造商:MISCELLANEOUS 功能描述: 制造商:NUTS 功能描述:
NSA5060-4 制造商: 功能描述: 制造商:undefined 功能描述:
NSA5067-3-1 制造商:MONADNOCK(OTHER HDW) 功能描述: 制造商:NUTS 功能描述:
NSA5084-08 制造商:NUTS 功能描述:
NSA5319-02-018 制造商: 功能描述: 制造商:undefined 功能描述:
NSA5355-3ACL 制造商: 功能描述: 制造商:undefined 功能描述:
NSA5472-5K7 制造商:MISC. SPCR/STNDF/HND 功能描述: